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Materials and Device Characterization in the Nano-Device Laboratory

Professor Balandin's Nano-Device Laboratory research group carries out experimental research in the field of semiconductor and hybrid bio-organic-inorganic nanostructures and novel devices based on these nanostructures (see Figure 1). Experimental research is closely correlated with the theoretical and modeling work performed in NDL. Apart from research benefits of combining both theoretical and experimental research in the same group, the hands-on experience with different materials and device characterization techniques is intended to improve NDL alumni's employment prospects.



Photo 1. Dr. Weili Liu with the low temperature characterization
setup. Nano-Device Laboratory, 2004.

Experimental equipment currently available at the Nano-Device Laboratory include but not limited to Renishaw micro-Raman spectroscopy with capability to examine phonon spectrum over wide frequency range (NeXT, Global Imaging, Mapping) under visible and UV excitation, photoluminescence (PL) spectroscopy, thermal conductivity measurement setup, Signatone probe station with temperature controlled chuck and Agilent HP4142-based SMUs for measuring current-voltage (I-V) characteristics, Hall mobility measurement setup, Agilent high-precision LCR meter for capacitance - voltage (C-V) spectroscopy, atomic-force microscopy (AFM), scanning tunneling microscopy (STM) and optical microscopy (see Figures 1-4).



Photo 2. Nano-device characterization setup for measurements
of I-V, C-V and thermal characteristics over a wide range of
temperatures (4K- 600K). Nano-Device Laboratory, 2004.

The NDL experimental equipment features in-house built thermal conductivity measurement setup (3-omega-method, which is used for thermal characterization of nanostructures (see details on thermal measurements here). Electrical and thermal characterization of nano-devices can be carrier out in a wide range of temperatures from 4K to 600K. In addition, NDL group members actively use facilities (see Figure 5) of the Analytical Microscopy Laboratory located in the same building, which include transmission electron microscopy (TEM) and scanning electron microscopy (SEM).



Photo 3. Research Assistant Yun Bao performs capacitance spectroscopy
of Ge/Si quantum dot arrays. Nano-Device Laboratory, 2004.

Experimental activities in the Nano-Device Laboratory are correlated with theoretical and device modeling and simulation work. For, example experimental investigation of GaN/AlGaN HFETs characteristics and self-heating effects is accompanied by corresponding modeling efforts described in the Device Modeling section.



Photo 4. Staff Researcher Andre Morgan is working with
micro-Raman spectrometer. Nano-Device Laboratory, 2004.

More information on the experimental and theoretical projects currently under way in the Nano-Device Laboratory (NDL) can be found HERE. To join NDL as a graduate student or postdoctoral research visit the web-page HERE. To learn more about course offering in the field of Materials, Devices and Circuits visit the web-page HERE.



Photo 5. Postdoctoral Researcher Dr. Olga Lazarenkova studies nanostructures
using TEM and SEM techniques. UCR, 2002.
 
 
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