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THERMAL MANAGEMENT OF NANOSCALE DEVICES AND CIRCUITS

   Figure 1: Thermal conductivity of silicon
   thin films is smaller than that of bulk silicon
   due to phonon-boundary scattering and it is
   further reduced by the phonon dispersion
   modification when the structure dimensions W
   are much smaller than the phonon mean free
   path.


   Figure 2: Lattice thermal conductivity as
   a function of the interface quality parameter
   p calculated for a silicon cylindrical nanowire
   and thin film of the same feature size W=20nm.
   Value p=1 corresponds to an ideal interface.
   After Zou and Balandin, J. Appl. Phys., 2001.


   Figure 3: Deacrease of the in-plane lattice
   thermal conductivity of a quantum well
   due to acoustic phonon confinement.
   After Balandin and Wang, Phys. Rev. B, 1998.




Sponsors:


National Science Foundation
Electrical & Communication Systems



Faculty Early CAREER Development Award



Project Duration: 2001-2006


The first goal of this project is to identify nanoscale size effects that deteriorate thermal management of devices and circuits as their feature dimensions continue to shrink. The second goal is to develop theoretical models and computer simulation tools for description of confined acoustic phonon transport through multi-layer medium, which constitutes a device structure or chip + interconnect system. A particular focus of this research is acoustic phonon spectrum modification at nanoscale and effects of phonon confinement on the lattice thermal conductivity.





Relevant Publications:

* Heat conduction in nanowires [PDF] (J. Zou and A. Balandin, J. Appl. Phys., 2001)

* Thermal conductivity of quantum wells (A. Balandin and K.L. Wang, Phys. Rev. B, 1998)



Disclaimer: Any opinions, findings, and conclusions or recommendations expressed in this web-site are those of the authors and do not necessarily reflect the views of the National Science Foundation.
 
 
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