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| NANO - DEVICE LABORATORY >
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Electrical Engineering University of California, Riverside
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Mission Statement
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| PROJECTS AND SPONSORS >
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THERMAL MANAGEMENT OF NANOSCALE DEVICES AND CIRCUITS
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Figure 1: Thermal conductivity of silicon
thin films is smaller than that of bulk silicon
due to phonon-boundary scattering and it is
further reduced by the phonon dispersion
modification when the structure dimensions W
are much smaller than the phonon mean free
path.

Figure 2: Lattice thermal conductivity as
a function of the interface quality parameter
p calculated for a silicon cylindrical nanowire
and thin film of the same feature size W=20nm.
Value p=1 corresponds to an ideal interface.
After Zou and Balandin, J. Appl. Phys., 2001.

Figure 3: Deacrease of the in-plane lattice
thermal conductivity of a quantum well
due to acoustic phonon confinement.
After Balandin and Wang, Phys. Rev. B, 1998.
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Sponsors:
National Science Foundation
Electrical & Communication Systems
Faculty Early CAREER Development Award
Project Duration: 2001-2006
The first goal of this project is to identify nanoscale size effects that deteriorate thermal management of devices and circuits as their feature dimensions continue to shrink. The second goal is to develop theoretical models and computer simulation tools for description of confined acoustic phonon transport through multi-layer medium, which constitutes a device structure or chip + interconnect system. A particular focus of this research is acoustic phonon spectrum modification at nanoscale and effects of phonon confinement on the lattice thermal conductivity.
Relevant Publications:
* Heat conduction in nanowires [PDF] (J. Zou and A. Balandin, J. Appl. Phys., 2001)
* Thermal conductivity of quantum wells (A. Balandin and K.L. Wang, Phys. Rev. B, 1998)
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Disclaimer: Any opinions, findings, and conclusions or recommendations expressed in this web-site
are those of the authors and do not necessarily reflect the views of the National Science Foundation.
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