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   Figure 1: Micrograph of GaN/AlGaN HFET

   Figure 2: Calculated electric field distribution
   in GaN/AlGaN Heter-Field-Effect Transistor
   near breakdown. After Turin and Balandin,
   Electronics Letters, 2003.

   Figure 2: Calculated temperature distribution
   in GaN/AlGaN HFET near thermal breakdown.
   After Turin and Balandin,EL, 2003.

   Figure 3: Experimental demonstration of drastic
   noise reduction in undoped GaN/AlGaN HFETs.
   After Balandin et. al, Appl. Phys. Lett., 1999.


Office of Naval Research
Electronics Division

ONR Young Investigator Award

Project Duration: 2002-2005

GaN/AlGaN heterostructure field-effect transistors (HFETs) have demonstrated potential for high-power density and high-frequency applications. At the same time, performance of these devices has been limited by self-heating and other problems associated with large defect densities, which lead to transconductance frequency dispersion, current collapse, restricted microwave power, gate- and drain-lag transients, etc. This project addresses some of these issues important for development of GaN-based technology.

Relevant Publications:

* The effect of the thermal boundary resistance on self-heating of AlGaN/GaN HFETs (K.A. Filippov and A.A. Balandin, J. Nitride Semiconduct. Research, 2003).

* Thermal conductivity of GaN layers [PDF] (D. Kotchetkov, J. Zou, A. Balandin, et. al., Appl. Phys. Lett., 2001).

* Low flicker-noise GaN/AlGaN HFETs (A. Balandin, et. al., IEEE Trans. Microwave Theory and Techniques, 1999).

* Effect of channel doping on noise in GaN/AlGaN HFETs (A. Balandin, et. al., Appl. Phys. Lett., 1999).

Disclaimer: Any opinions, findings, and conclusions or recommendations expressed in this web-site are those of the authors and do not necessarily reflect the views of the Office of Naval Research.
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