Figure 1: Micrograph of GaN/AlGaN HFET
Figure 2: Calculated electric field distribution
in GaN/AlGaN Heter-Field-Effect Transistor
near breakdown. After Turin and Balandin,
Electronics Letters, 2003.
Figure 2: Calculated temperature distribution
in GaN/AlGaN HFET near thermal breakdown.
After Turin and Balandin,EL, 2003.
Figure 3: Experimental demonstration of drastic
noise reduction in undoped GaN/AlGaN HFETs.
After Balandin et. al, Appl. Phys. Lett., 1999.
Office of Naval Research
ONR Young Investigator Award
Project Duration: 2002-2005
GaN/AlGaN heterostructure field-effect transistors (HFETs) have demonstrated potential for high-power
density and high-frequency applications. At the same time, performance of these devices has been limited
by self-heating and other problems associated with large defect densities, which lead to transconductance
frequency dispersion, current collapse, restricted microwave power, gate- and drain-lag transients, etc.
This project addresses some of these issues important for development of GaN-based technology.
* The effect of the thermal boundary resistance
on self-heating of AlGaN/GaN HFETs (K.A. Filippov and A.A. Balandin, J. Nitride Semiconduct. Research, 2003).
* Thermal conductivity of GaN layers [PDF] (D. Kotchetkov, J. Zou, A. Balandin, et. al., Appl. Phys. Lett., 2001).
* Low flicker-noise GaN/AlGaN HFETs (A. Balandin, et. al., IEEE Trans. Microwave Theory and Techniques, 1999).
* Effect of channel doping on noise in GaN/AlGaN HFETs (A. Balandin, et. al., Appl. Phys. Lett., 1999).