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Selected Journal Papers: 1999


Research Field: Low Frequency Noise in Electronic Devices

* A. Balandin, S. Morozov, G. Wijeratne, S.J. Cai, R. Li, J. Li, K.L. Wang, C.R. Viswanathan and Yu. Dubrovskii, "Effect of channel doping on the low-frequency noise in GaN/AlGaN HFETs," Applied Physics Letters, 75: 2064 (1999)
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* A. Balandin, S. Morozov, S. Cai, R. Li, K.L. Wang, G. Wijeratne and C.R. Viswanathan, "Low flicker-noise GaN/A1GaN heterostructure field-effect transistors for microwave communications," IEEE Trans. Microwave Theory and Techniques , 47: 1413 (1999)
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* A. Balandin, K.L. Wang, A. Svizhenko, and S. Bandyopadhyay, “1/f noise and the Hooge parameter in semiconductor quantum wires,” IEEE Trans. Electron Devices, 46: 1240 (1999)


Research Field: Properties and Applications of Semiconductor Quantum Dots

* A. Balandin and K.L. Wang, "Feasibility study of the quantum XOR gate based on coupled asymmetric quantum dots," J. Superlattices and Microstructures , 25: 509 (1999)
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* J.L. Liu, W.G. Wu, A. Balandin, G.L. Jin and K.L. Wang, “Intersubband absorption in boron-doped multiple Ge quantum dots,” Applied Physics Letters, 74: 185 (1999)
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* J.L. Liu, W.G. Wu, A. Balandin, G.L. Jin, Y.H. Luo, S.G. Thomas, Y. Lu and K.L. Wang, “Observation of intraband transitions in modulation-doped Ge quantum dots,” Applied Physics Letters, 75: 1745 (1999)
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* Y. Dubrovskii, E.E. Vdovin, V.G. Popov, D.K. Maude, J.C. Portal, J. Maan, K.L. Wang, A. Balandin, T.G. Anderson and S. Wang, “Resonant and correlation effects in the tunnel structures in a high magnetic field,” Phys. Low-Dim. Structures, 3/4: 181 (1999)


Research Field: Phonon Confinement Effects

* A. Khitun, A. Balandin and K.L. Wang, “Modification of the thermal conductivity in silicon quantum wires due to spatial confinement of acoustic phonons,” J. Superlattices and Microstructures, 26: 181 (1999)
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Contact group members for the reprints of other relevant papers.


Complete Chronological Publication Lists of the NDL Group Members are HERE.
 
 
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