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Selected Journal Papers: 2004

Research Field: Properties and Applications of ZnO, GaN and Ge Quantum Dots

* Y. Bao, A.A. Balandin, J.L. Liu and Y.H. Xie, “Experimental investigation of Hall mobility in Ge/Si quantum dot superlattices,” Applied Physics Letters, 84: 3355 (2004)
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* V.A. Fonoberov and A.A. Balandin, “Origin of ultraviolet photoluminescence in ZnO quantum dots: Confined excitons vs. surface-bound excitons,“ Applied Physics Letters, 85 : 5971 (2004)
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* V.A. Fonoberov and A.A. Balandin, “Radiative lifetime of excitons in ZnO nanocrystals: The dead-layer effect,“ Physical Review B, 70: 195410 (2004)
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* V.A. Fonoberov and A.A. Balandin, “Optical properties of wurtzite and zincblende GaN/AlN quantum dots,“ J. Vacuum Science and Technology B, 22: 2190 (2004)
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* V.A. Fonoberov and A.A. Balandin, “Interface and confined optical phonons in wurtzite nanocrystals,“ Physical Review B, 70: (2004)
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* V.A. Fonoberov and A.A. Balandin, “Interface and confined polar optical phonons in ZnO quantum dots,” physica status solidi (c), 11: 2650 (2004)
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Research Field: Nano-Phononics and Phonon Engineering

* V.A. Fonoberov and A.A. Balandin, “Low-frequency vibrational modes of viruses used for nanoelectronic self-assembly,” physica status solidi (b): Rapid Research Notes , 12: R67 (2004)
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* E.P. Pokatilov, D. Nika and A.A. Balandin, “A phonon depletion effect in ultrathin heterostructure with acoustically mismatched layers,"Applied Physics Letters, 85: 825 (2004)
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* A.A. Balandin, D.L. Nika and E.P. Pokatilov “Phonon spectrum and group velocities in wurtzite heterostructures,” physica status solidi (c) , 11: 2658 (2004)
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* E.P. Pokatilov, D. Nika and A.A. Balandin, “ Confined electron - confined phonon scattering rates in wurtzite AlN/GaN/AlN heterostructures,"J. Applied Physics, 95: 5626 (2004)
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* I. Sur, A. Casian and A.A. Balandin, “Electronic thermal conductivity and thermoelectric figure of merit of n-type PbTe/PbEuTe quantum wells,“ Physical Review B, 69: 035306, (2004)
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Research Field: Self-Heating Effects in GaN Transistors

* W.L. Liu and A.A. Balandin, “Temperature dependence of thermal conductivity of AlxGa1-xN thin films measured by the differential 3w technique,” Applied Physics Letters, 85: 5230 (2004)
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* V.O. Turin and A.A. Balandin,“Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN/substrate interface,” Electronics Letters, 40: 81 (2004)
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* W.L. Liu, V.O. Turin, A.A. Balandin, Y.L. Chen and K.L. Wang, “The ambient temperature effect on current-voltage characteristics of surface-passivated GaN-based field-effect transistors,” MRS J. of Nitride Semiconductor Research, 9: 7 (2004)
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Contact group members for reprints of other relevant papers.


Complete Chronological Publication Lists of the NDL Group Members are HERE.
 
 
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