Selected Journal Papers: 2006
Research Field: Properties and Applications of ZnO and GaN Nanostructures
* V.A. Fonoberov, K.A. Alim, A.A. Balandin,
F. Xu and J.L. Liu, "Photoluminescence investigation of the
carrier recombination processes in ZnO quantm dots and nanocrystals,"
Physical Review B, 73: 165317 (2006)
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* V.A. Fonoberov and A.A. Balandin, "ZnO quantum dots:
properties and optoelectronic applications,"
J. Nanoelectronics and Optoelectronics, 1: 19 (2006)
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* F. Xiu, Z. Yang, D. Zhao, J.L. Liu, K.A. Alim, A.A. Balandin,
M.E. Itkis and R.C. Haddon, "ZnO growth on Si with low-temperature
ZnO buffer layers by ECR-assisted MBE,"
J. Crystal Growth, 286: 61 (2006)
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* V.A. Fonoberov and A.A. Balandin, "Properties of GaN and ZnO quantum dots." in
Handbook of Semiconductor Nanostructures and Nanodevices, Vol. 3
(American Scientific Publishers, Los Angeles, 2006), Edited
by A.A. Balandin and K.L. Wang, pp 119-158
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Research Field: Phonon Engineering in Nanostructures and Hybrid Bio-Inorganic Systems
* V.A. Fonoberov and A.A. Balandin, "Giant enhancement of the carrier
mobility in silicon nanowires
with diamond coating," Nano Letters, 6: 2442 (2006)
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* S.V. Kalinin, S. Jesse, W.L. Liu and A.A. Balandin, "Evidence for flexoelectricity in
tobacco mosaic viruses used as nanotemplates," Applied Physics Letters, 88:
153902 (2006)
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Research Field: Thermal and Electrical Properties of Nanostructured Materials
* M. Shamsa, W.L. Liu, A. A. Balandin, C. Casiraghi, W.I. Milne, A.C. Ferrari,
"Thermal conduction in diamond-like carbon thin films,"
Applied Physics Letters, 89: 161921 (2006)
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* W.L. Liu, M. Shamsa, I. Calizo, A.A. Balandin, V. Ralchenko, A. Popovich, A. Saveliev,
"Thermal conduction in nanocrystalline diamond films: Effects of the grain boundary
scattering and nitrogen doping,"
Applied Physics Letters,89: 171915(2006)
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* D.S. Choi, A.A. Balandin, M.S. Leung, G. Stupian, N. Presser, S.W. Chung,
J.R. Heath, A. Khitun, K.L. Wang,
"Transport study of a single bismuth nanowire,"
Applied Physics Letters, 89: 141503 (2006)
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Research Field: GaN-Based Heterostructures and Field - Effect Transistors
* E.P. Pokatilov, D.L. Nika and A.A. Balandin,
"Electron mobility enhancement in AlN/GaN/AlN heterostructures with
InGaN nanogrooves," Applied Physics Letters, 89: 112110 (2006)
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* V.O. Turin and A.A. Balandin,
"Electro-thermal simulations of the self-heating effects in GaN-based
field-effect transistors," J. Applied Physics, 100: 054501 (2006)
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* E.P. Pokatilov, D.L. Nika and A.A. Balandin,
"The built-in field effect on the electron mobility
in AlN/GaN/AlN quantum wells," Applied Physics Letters, 89: 113508 (2006)
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* W.L. Liu, Y.L. Chen, A.A. Balandin, K.L. Wang,
"Capacitance – voltage spectroscopy of trapping states in
GaN/AlGaN heterostructure field-effect transistors,"
J. Nanoelectronics and Optoelectronics, 1: 158 (2006)
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Contact group members for reprints of other relevant papers.
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